JPH0577303B2 - - Google Patents

Info

Publication number
JPH0577303B2
JPH0577303B2 JP61069818A JP6981886A JPH0577303B2 JP H0577303 B2 JPH0577303 B2 JP H0577303B2 JP 61069818 A JP61069818 A JP 61069818A JP 6981886 A JP6981886 A JP 6981886A JP H0577303 B2 JPH0577303 B2 JP H0577303B2
Authority
JP
Japan
Prior art keywords
mos
layer
region
tft
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61069818A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62229873A (ja
Inventor
Nobutake Konishi
Yoshikazu Hosokawa
Akio Mimura
Takaya Suzuki
Junichi Oowada
Hideaki Kawakami
Kenji Myata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61069818A priority Critical patent/JPS62229873A/ja
Priority to US07/030,623 priority patent/US4942441A/en
Priority to DE87104622T priority patent/DE3786031T2/de
Priority to EP87104622A priority patent/EP0239958B1/en
Publication of JPS62229873A publication Critical patent/JPS62229873A/ja
Publication of JPH0577303B2 publication Critical patent/JPH0577303B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP61069818A 1986-03-29 1986-03-29 薄膜半導体装置の製造方法 Granted JPS62229873A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61069818A JPS62229873A (ja) 1986-03-29 1986-03-29 薄膜半導体装置の製造方法
US07/030,623 US4942441A (en) 1986-03-29 1987-03-27 Thin film semiconductor device and method of manufacturing the same
DE87104622T DE3786031T2 (de) 1986-03-29 1987-03-27 Dünnschicht-Halbleiterbauelement und sein Herstellungsverfahren.
EP87104622A EP0239958B1 (en) 1986-03-29 1987-03-27 Thin film semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61069818A JPS62229873A (ja) 1986-03-29 1986-03-29 薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62229873A JPS62229873A (ja) 1987-10-08
JPH0577303B2 true JPH0577303B2 (en]) 1993-10-26

Family

ID=13413720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61069818A Granted JPS62229873A (ja) 1986-03-29 1986-03-29 薄膜半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4942441A (en])
EP (1) EP0239958B1 (en])
JP (1) JPS62229873A (en])
DE (1) DE3786031T2 (en])

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* Cited by examiner, † Cited by third party
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JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
US5274279A (en) * 1988-05-17 1993-12-28 Seiko Epson Corporation Thin film CMOS inverter
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
JPH06101563B2 (ja) * 1988-07-19 1994-12-12 工業技術院長 薄膜電界効果トランジスタとその製造方法
GB2222306B (en) * 1988-08-23 1992-08-12 Plessey Co Plc Field effect transistor devices
US5200630A (en) * 1989-04-13 1993-04-06 Sanyo Electric Co., Ltd. Semiconductor device
DE69121629T2 (de) * 1990-04-27 1997-02-13 Nippon Electric Co Dünnfilmtransistor mit Schottky-Sperrschicht
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
EP0488801B1 (en) * 1990-11-30 1998-02-04 Sharp Kabushiki Kaisha Thin-film semiconductor device
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5821563A (en) * 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
US7253437B2 (en) * 1990-12-25 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Display device having a thin film transistor
DE4101167A1 (de) * 1991-01-17 1992-07-23 Daimler Benz Ag Anordnung und verfahren zur herstellung komplementaerer feldeffekttransistoren
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5854494A (en) * 1991-02-16 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JP3556679B2 (ja) * 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP2717237B2 (ja) 1991-05-16 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JPH0611705A (ja) * 1992-01-31 1994-01-21 Sony Corp 能動素子基板
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
JPH0766424A (ja) 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TW297142B (en]) * 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
US6777763B1 (en) 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP3030368B2 (ja) 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5616935A (en) * 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
JP3402400B2 (ja) * 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
US5693983A (en) * 1994-04-28 1997-12-02 Xerox Corporation Thin-film structure with conductive molybdenum-chromium line
JPH0878693A (ja) * 1994-08-31 1996-03-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6706572B1 (en) 1994-08-31 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor using a high pressure oxidation step
KR100304551B1 (ko) * 1994-09-23 2001-12-01 구자홍 박막트랜지스터제조방법
RU2130668C1 (ru) * 1994-09-30 1999-05-20 Акционерное общество закрытого типа "VL" Полевой транзистор типа металл - диэлектрик-полупроводник
KR0151876B1 (ko) * 1994-11-30 1998-10-01 엄길용 액정표시장치용 박막 트랜지스터 및 그 제조방법
JP3685869B2 (ja) * 1996-05-08 2005-08-24 株式会社半導体エネルギー研究所 液晶表示装置
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6370502B1 (en) * 1999-05-27 2002-04-09 America Online, Inc. Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
US20030235936A1 (en) * 1999-12-16 2003-12-25 Snyder John P. Schottky barrier CMOS device and method
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
US6949787B2 (en) * 2001-08-10 2005-09-27 Spinnaker Semiconductor, Inc. Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
US20060079059A1 (en) * 2001-08-10 2006-04-13 Snyder John P Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
US6555879B1 (en) * 2002-01-11 2003-04-29 Advanced Micro Devices, Inc. SOI device with metal source/drain and method of fabrication
US6974737B2 (en) * 2002-05-16 2005-12-13 Spinnaker Semiconductor, Inc. Schottky barrier CMOS fabrication method
US7105851B2 (en) * 2003-09-24 2006-09-12 Intel Corporation Nanotubes for integrated circuits
KR100624428B1 (ko) * 2003-12-30 2006-09-19 삼성전자주식회사 다결정 실리콘 반도체소자 및 그 제조방법
TWI234288B (en) * 2004-07-27 2005-06-11 Au Optronics Corp Method for fabricating a thin film transistor and related circuits
US8318552B2 (en) * 2007-06-28 2012-11-27 3M Innovative Properties Company Method for forming gate structures
KR100930997B1 (ko) * 2008-01-22 2009-12-10 한국화학연구원 탄소나노튜브 트랜지스터 제조 방법 및 그에 의한탄소나노튜브 트랜지스터
CN101286530B (zh) * 2008-05-08 2010-06-02 西安电子科技大学 多晶硅薄膜晶体管
KR101608887B1 (ko) * 2009-04-17 2016-04-05 삼성전자주식회사 인버터와 그 제조방법 및 인버터를 포함하는 논리회로
KR101272892B1 (ko) * 2009-11-11 2013-06-11 엘지디스플레이 주식회사 어레이 기판
CN104103643B (zh) * 2013-04-08 2017-04-12 群创光电股份有限公司 显示面板以及其包含的薄膜晶体管基板的制备方法

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JPS58223362A (ja) * 1982-06-21 1983-12-24 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US4736229A (en) * 1983-05-11 1988-04-05 Alphasil Incorporated Method of manufacturing flat panel backplanes, display transistors and displays made thereby
JPS6074561A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd Ｃｍｏｓ半導体装置
JPS60154661A (ja) * 1984-01-25 1985-08-14 Seiko Epson Corp 半導体装置

Also Published As

Publication number Publication date
DE3786031D1 (de) 1993-07-08
EP0239958B1 (en) 1993-06-02
DE3786031T2 (de) 1994-01-05
US4942441A (en) 1990-07-17
EP0239958A3 (en) 1989-11-02
JPS62229873A (ja) 1987-10-08
EP0239958A2 (en) 1987-10-07

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Legal Events

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EXPY Cancellation because of completion of term